收藏本站
QS6M3
Transistors
N-ch
Electrical characteristic curves
1000
100
C iss
Ta = 25 ° C
f = 1MHz
V GS = 0V
1000
100
t f
Ta = 25 ° C
V DD = 15V
V GS = 4.5V
R G = 10 ?
Pulsed
6
Ta = 25 ° C
V DD = 15V
5 I D = 1.5A
R G = 10 ?
Pulsed
4
C rss
C oss
t d (off)
3
10
10
t d (on)
t r
2
1
1
0.01
0.1
1
10
100
1
0.01
0.1
1
10
0
0
0.5
1
1.5
2
DRAIN-SOURCE VOLTAGE : V DS (A)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
DRAIN CURRENT : I D (A)
Fig.2 Switching Characteristics
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
10
1
Ta = 125 ° C
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
V DS = 10V
Pulsed
1.0
0.9
0.8
0.7
0.6
I D = 1.5A
I D = 0.75A
Ta = 25 ° C
Pulsed
10
1
Ta = 125 ° C
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
V GS = 0V
Pulsed
0.1
0.5
0.4
0.3
0.1
0.01
0.2
0.1
0.001
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0
1
2
3
4
5
6
7
8
9
10
0.01
0.0
0.5
1.0
1.5
GATE-SOURCE VOLTAGE : V GS (V)
Fig.4 Typical Transfer Characteristics
GATE-SOURCE VOLTAGE : V GS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
SOURCE-DRAIN VOLTAGE : V SD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
10
V GS = 4.5V
10
V GS = 4.0V
10
V GS = 2.5V
Pulsed
Pulsed
Pulsed
1
Ta = 125 ° C
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
1
Ta = 125 ° C
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
1
Ta = 125 ° C
Ta = 75 ° C
Ta = 25 ° C
Ta = ? 25 ° C
0.1
0.01
0.1
1
10
0.1
0.01
0.1
1
10
0.1
0.01
0.1
1
10
DRAIN CURRENT : I D (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current ( Ι )
DRAIN CURRENT : I D (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙ )
DRAIN CURRENT : I D (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current ( ΙΙΙ )
Rev.B
4/7
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
QS6M4TR MOSFET N+P 30,20V 1.5A TSMT6
QS6U22TR MOSFET P-CH 20V 1.5A TSMT6
QS6U24TR MOSFET P-CH 30V 1A TSMT6
QS8K2TR MOSFET 2N-CH 30V 3.5A TSMT8
QSB320FTR PHOTOTRANSISTOR IR 880NM 2-PLCC
QSB34 PHOTODIODE GULL WING SMD
QSB363CYR PHOTOTRANSISTOR IR GULL WING 5MM
QSB363GR PHOTOTRANS IR 940NM GW TOPLOOKER
相关代理商/技术参数
QS6M4 制造商:ROHM Semiconductor 功能描述:MOSFET,Pch(20V)Nch(30V),1.5A2,TSMT6
QS6M4_1 制造商:ROHM 制造商全称:Rohm 功能描述:2.5V Drive Nch+Pch MOSFET
QS6M4TR 功能描述:MOSFET N+P 30 20V 1.5A TSMT6 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
QS6U22 制造商:ROHM 制造商全称:Rohm 功能描述:2.5V Drive Pch+SBD MOS FET
QS6U22_1 制造商:ROHM 制造商全称:Rohm 功能描述:2.5V Drive Pch+SBD MOS FET
QS6U22TR 功能描述:MOSFET P-CH 20V 1.5A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
QS6U24 制造商:ROHM 制造商全称:Rohm 功能描述:Small switching (-30V, -1A)
QS6U24_1 制造商:ROHM 制造商全称:Rohm 功能描述:4V Drive Pch+SBD MOS FET